https://scholars.lib.ntu.edu.tw/handle/123456789/428010| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Tzu-Hung Liu | en_US |
| dc.contributor.author | Yen Chuang | en_US |
| dc.contributor.author | Po-Yuan Chiu | en_US |
| dc.contributor.author | Chia-You Liu | en_US |
| dc.contributor.author | Cheng-Hong Shen | en_US |
| dc.contributor.author | Guang-Li Lou | en_US |
| dc.contributor.author | Jiun-Yun Li | en_US |
| dc.contributor.author | JIUN-YUN LI | en_US |
| dc.contributor.author | 李峻霣 | zh-TW |
| dc.creator | 李峻霣;JIUN-YUN LI;Jiun-Yun Li;Guang-Li Lou;Cheng-Hong Shen;Chia-You Liu;Po-Yuan Chiu;Yen Chuang;Tzu-Hung Liu | - |
| dc.date.accessioned | 2019-10-24T08:26:23Z | - |
| dc.date.available | 2019-10-24T08:26:23Z | - |
| dc.date.issued | 2018 | - |
| dc.identifier.issn | 7413106 | - |
| dc.identifier.uri | https://scholars.lib.ntu.edu.tw/handle/123456789/428010 | - |
| dc.relation.ispartof | IEEE Electron Device Letters | - |
| dc.title | High-mobility GeSn n-channel MOSFETs by low-temperature chemical vapor deposition and microwave annealing | en_US |
| dc.type | journal article | - |
| dc.identifier.doi | 10.1109/led.2018.2808167 | - |
| dc.identifier.scopus | 2-s2.0-85042373986 | - |
| dc.relation.pages | 184-190 | - |
| dc.relation.journalvolume | 39 | - |
| dc.relation.journalissue | 4 | - |
| item.openairetype | journal article | - |
| item.fulltext | no fulltext | - |
| item.grantfulltext | none | - |
| item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
| item.cerifentitytype | Publications | - |
| crisitem.author.dept | Electrical Engineering | - |
| crisitem.author.dept | Electronics Engineering | - |
| crisitem.author.orcid | 0000-0003-4905-9954 | - |
| crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
| crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
| Appears in Collections: | 電機工程學系 | |
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