High-mobility GeSn n-channel MOSFETs by low-temperature chemical vapor deposition and microwave annealing
Journal
IEEE Electron Device Letters
Journal Volume
39
Journal Issue
4
Pages
184-190
Date Issued
2018
Author(s)
Tzu-Hung Liu
Yen Chuang
Po-Yuan Chiu
Chia-You Liu
Cheng-Hong Shen
Guang-Li Lou
Jiun-Yun Li
李峻霣
Type
journal article