https://scholars.lib.ntu.edu.tw/handle/123456789/429073
標題: | Rearrangement of Fringing Field by Sidewall Passivated Metal Gate in MIS Tunnel Diode | 作者: | C.J.Chou JENN-GWO HWU |
公開日期: | 2017 | 卷: | 77 | 期: | 5 | 起(迄)頁: | 2752-2757 | 來源出版物: | Electrochemical Society Transactions | 摘要: | In order to reduce the interference caused by fringing field, a cost-effective method to form passivation layer on the edge side of aluminum gate was demonstrated. In capacitance-voltage (C-V) characteristics, it is found that the initiation point of deep depletion is at a smaller VG, the sensitivity to light is less evident, and the value of capacitance is more area-dependent. All of these significant different observations are indications of the rearrangement of fringing field. Furthermore, TCAD simulations were employed to support the observed phenomenon. © The Electrochemical Society. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85021786275&doi=10.1149%2f07705.0099ecst&partnerID=40&md5=9676fa0734490928f912c1b91d5d8519 | ISSN: | 19385862 | DOI: | 10.1149/07705.0099ecst | SDG/關鍵字: | Cost effectiveness; Integrated circuits; Passivation; Aluminum-gate; Capacitance-voltage characteristics; Cost-effective methods; Deep depletion; Fringing fields; Metal gate; Passivation layer; TCAD simulation; Capacitance |
顯示於: | 電機工程學系 |
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