|Title:||12 GHz spontaneous optical bandwidth tunnel junction light-emitting transistor||Authors:||Wu, Cheng Han
Wu, Chao Hsin
|Issue Date:||28-Oct-2019||Journal Volume:||115||Journal Issue:||18||Source:||Applied Physics Letters||Abstract:||
© 2019 Author(s). In this report, a quantum-well based light-emitting transistor with an Al0.1Ga0.9As/In0.05Ga0.95As tunnel junction collector in a common-emitter configuration with a double-digit gigahertz optical -3 dB bandwidth (f-3 dB) is demonstrated. Both the electrical and optical characteristics and the corresponding carrier dynamics are investigated. From microwave measurements, a -3 dB bandwidth up to 12.6 GHz via direct voltage (field) modulation is exhibited when the device is operated in a negative differential resistance state. The voltage-modulated optical characteristics are sensitive to the operation of the base-collector tunnel junction. The "enhanced single-pole optical response" can be attributed to the modulation amplitude decay at low frequencies due to the high impedance at the base-collector junction.
|Appears in Collections:||醫學院附設醫院 (臺大醫院)|
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