Tuning of the work function of bilayer metal gate by in-situ atomic layer lamellar doping of AlN in TiN interlayer

Journal

Journal of Applied Physics

Journal Volume

122

Journal Issue

9

Date Issued

2017

Author(s)

Huang K.-W.

Cheng P.-H.

Lin Y.-S.

Wang C.-I.

Lin H.-C.

DOI

10.1063/1.5001129

URI

https://www.scopus.com/inward/record.uri?eid=2-s2.0-85028940282&doi=10.1063%2f1.5001129&partnerID=40&md5=0313b4530a5f79c2804fe17b15160e62

https://scholars.lib.ntu.edu.tw/handle/123456789/432409

Publisher

American Institute of Physics Inc.

Type

journal article