https://scholars.lib.ntu.edu.tw/handle/123456789/436721
標題: | Landau-level mixing, floating-up extended states, and scaling behavior in a GaAs-based two-dimensional electron system containing self-assembled InAs dots | 作者: | Liu, C.-W. Liu, C.-I. Kim, G.-H. Huang, C.F. Hang, D.R. CHI-TE LIANG YUAN-HUEI CHANG |
關鍵字: | floating-up; insulating state; semicircle | 公開日期: | 2017 | 卷: | 32 | 期: | 8 | 來源出版物: | Semiconductor Science and Technology | 摘要: | Temperature-driven flow lines are studied in the conductivity plane in a GaAs-based two-dimensional electron system containing self-assembled InAs dots when Landau level filling factor ν = 2-4. In the insulator-quantum Hall (I-QH) transition resulting from the floating-up of the extended states, the flow diagram shows the critical behavior and we observed the expected semicircle in the strongest disorder case. By decreasing the effective disorder, we find that such flow lines can leave the I-QH regime and correspond to the plateau-plateau transition between ν = 4 and 2. The evolution of the conductivity curve at low magnetic fields demonstrates the importance of Landau-level mixing to the semicircle when the extended states float up. © 2017 IOP Publishing Ltd. |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/436721 https://www.scopus.com/inward/record.uri?eid=2-s2.0-85026384312&doi=10.1088%2f1361-6641%2faa7a4c&partnerID=40&md5=171539db6f0d310276d054bee675ce1c |
ISSN: | 02681242 | DOI: | 10.1088/1361-6641/aa7a4c | SDG/關鍵字: | Curve fitting; Gallium arsenide; Mixing; Semiconducting gallium; Critical behavior; floating-up; Insulating state; Landau level filling factors; Low magnetic fields; Scaling behavior; semicircle; Two-dimensional electron system; Quantum theory |
顯示於: | 物理學系 |
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