In situ direct determination of band offset and interfacial dipole potential of a laminar ALD-Y 2 O 3 on a p-type GaAs(0 0 1)-4 ? 6 surface
Journal
Journal of Physics D: Applied Physics
Journal Volume
51
Journal Issue
40
Date Issued
2018
Author(s)
Cheng, C.-P.
Chen, W.-S.
Cheng, Y.-T.
Wan, H.-W.
Lin, K.-Y.
Young, L.B.
Yang, C.-Y.
Pi, T.-W.
Kwo, J.
Abstract
Abstract Using in situ synchrotron-radiation photoelectron spectroscopy, the band offsets and the surface dipole potential energy for cycle-by-cycle atomic layer deposited (ALD) Y 2 O 3 on p -type GaAs(0 0 1)-4 × 6 were studied. We have characterized the electronic property for laminar films. The valence- and conduction-band offsets and interfacial dipole potential energy are approximately 1.75, 2.4, and 0.46 eV, respectively. The dipole direction points outward, showing that Y(+) is located at the topmost layer and the O(−) ions participate in the bonding with the GaAs surface atoms.
SDGs
Type
journal article