https://scholars.lib.ntu.edu.tw/handle/123456789/443303
Title: | Effective surface passivation of In<inf>0.53</inf>Ga<inf>0.47</inf>As(0 0 1) using molecular beam epitaxy and atomic layer deposited HfO<inf>2</inf> ??A comparative study | Authors: | Hong, M. Wan, H.W. Chang, P. Lin, T.D. Chang, Y.H. Lee, W.C. Pi, T.W. Kwo, J. MINGHWEI HONG |
Issue Date: | 2017 | Journal Volume: | 477 | Start page/Pages: | 159-163 | Source: | Journal of Crystal Growth | URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/443303 | DOI: | 10.1016/j.jcrysgro.2017.04.006 |
Appears in Collections: | 物理學系 |
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