https://scholars.lib.ntu.edu.tw/handle/123456789/443326
Title: | Passivation of GaSb using molecular beam epitaxy Y <inf>2</inf> O <inf>3</inf> to achieve low interfacial trap density and high-performance self-aligned inversion-channel p-metal-oxide-semiconductor field-effect-transistors | Authors: | Chu, R.L. Chiang, T.H. Hsueh, W.J. Chen, K.H. Lin, K.Y. Brown, G.J. Chyi, J.I. Kwo, J. Hong, M. MINGHWEI HONG |
Issue Date: | 2014 | Journal Volume: | 105 | Journal Issue: | 18 | Source: | Applied Physics Letters | URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/443326 | DOI: | 10.1063/1.4901100 |
Appears in Collections: | 物理學系 |
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