https://scholars.lib.ntu.edu.tw/handle/123456789/443358
Title: | Atomic-layer-deposited Al<inf>2</inf>O<inf>3</inf> and HfO<inf>2</inf> on GaN: A comparative study on interfaces and electrical characteristics | Authors: | Chang, Y.C. Huang, M.L. Chang, Y.H. Lee, Y.J. Chiu, H.C. Kwo, J. Hong, M. MINGHWEI HONG |
Issue Date: | 2011 | Journal Volume: | 88 | Journal Issue: | 7 | Start page/Pages: | 1207-1210 | Source: | Microelectronic Engineering | URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/443358 | DOI: | 10.1016/j.mee.2011.03.098 |
Appears in Collections: | 物理學系 |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.