https://scholars.lib.ntu.edu.tw/handle/123456789/443381
Title: | Achieving high-performance Ge MOS devices using high-庥 gate dielectrics Ga2O3(Gd2O3) of sub-nm EOT | Authors: | Chu, L.K. Chu, R.L. Lin, C.A. Lin, T.D. Chiang, T.H. Kwo, J. Hong, M. MINGHWEI HONG |
Issue Date: | 2010 | Start page/Pages: | 25-26 | Source: | Device Research Conference | URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/443381 | DOI: | 10.1109/DRC.2010.5551961 |
Appears in Collections: | 物理學系 |
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