https://scholars.lib.ntu.edu.tw/handle/123456789/443384
Title: | Self-aligned inversion-channel In<inf>0.75</inf>Ga<inf>0.25</inf>As metal-oxide-semiconductor field-effect-transistors using UHV-Al <inf>2</inf>O<inf>3</inf>/Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O <inf>3</inf>) and ALD-Al<inf>2</inf>O<inf>3</inf> as gate dielectrics | Authors: | Lin, T.D. Chiu, H.C. Chang, P. Chang, Y.H. Wu, Y.D. Hong, M. Kwo, J. MINGHWEI HONG |
Issue Date: | 2010 | Journal Volume: | 54 | Journal Issue: | 9 | Start page/Pages: | 919-924 | Source: | Solid-State Electronics | URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/443384 | DOI: | 10.1016/j.sse.2010.04.033 |
Appears in Collections: | 物理學系 |
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