https://scholars.lib.ntu.edu.tw/handle/123456789/443413
Title: | Inversion n-channel GaN MOSFETs with atomic-layer-deposited Al <inf>2</inf> O <inf>3</inf> as gate dielectrics | Authors: | Chang, Y.C. Chang, W.H. Chiu, H.C. Shiu, K.H. Lee, C.H. Hong, M. Kwo, J. Hong, J.M. Tsai, C.C. MINGHWEI HONG |
Issue Date: | 2008 | Start page/Pages: | 81-82 | Source: | Device Research Conference | URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/443413 | DOI: | 10.1109/DRC.2008.4800744 |
Appears in Collections: | 物理學系 |
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