https://scholars.lib.ntu.edu.tw/handle/123456789/443425
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Shiu, K.H. | en_US |
dc.contributor.author | Chiang, T.H. | en_US |
dc.contributor.author | Chang, P. | en_US |
dc.contributor.author | Tung, L.T. | en_US |
dc.contributor.author | MINGHWEI HONG | en_US |
dc.contributor.author | Kwo, J. | en_US |
dc.contributor.author | Tsai, W. | en_US |
dc.creator | Shiu, K.H.;Chiang, T.H.;Chang, P.;Tung, L.T.;Hong, M.;Kwo, J.;Tsai, W. | - |
dc.date.accessioned | 2019-12-27T07:49:42Z | - |
dc.date.available | 2019-12-27T07:49:42Z | - |
dc.date.issued | 2008 | - |
dc.identifier.uri | https://scholars.lib.ntu.edu.tw/handle/123456789/443425 | - |
dc.relation.ispartof | Applied Physics Letters | - |
dc.title | 1 nm equivalent oxide thickness in Ga2 O3 (Gd2 O3) In0.2 Ga0.8 As metal-oxide-semiconductor capacitors | - |
dc.type | journal article | en |
dc.identifier.doi | 10.1063/1.2918835 | - |
dc.identifier.scopus | 2-s2.0-43049083322 | - |
dc.identifier.url | https://www.scopus.com/inward/record.uri?eid=2-s2.0-43049083322&doi=10.1063%2f1.2918835&partnerID=40&md5=c141b75da50ace1ffff7c8f3f2ebd74d | - |
dc.relation.journalvolume | 92 | - |
dc.relation.journalissue | 17 | - |
item.fulltext | no fulltext | - |
item.openairetype | journal article | - |
item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
item.grantfulltext | none | - |
item.cerifentitytype | Publications | - |
crisitem.author.dept | Applied Physics | - |
crisitem.author.dept | Center for Condensed Matter Sciences | - |
crisitem.author.dept | Electronics Engineering | - |
crisitem.author.dept | Physics | - |
crisitem.author.orcid | 0000-0003-4657-0933 | - |
crisitem.author.parentorg | College of Science | - |
crisitem.author.parentorg | Others: University-Level Research Centers | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Science | - |
Appears in Collections: | 物理學系 |
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