https://scholars.lib.ntu.edu.tw/handle/123456789/443432
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chen, C.-P. | en_US |
dc.contributor.author | Lin, T.-D. | en_US |
dc.contributor.author | Chang, Y.-C. | en_US |
dc.contributor.author | Hong, M. | en_US |
dc.contributor.author | Kwo, J.R. | en_US |
dc.contributor.author | MINGHWEI HONG | zz |
dc.creator | Chen, C.-P.;Lin, T.-D.;Chang, Y.-C.;Hong, M.;Kwo, J.R. | - |
dc.date.accessioned | 2019-12-27T07:49:43Z | - |
dc.date.available | 2019-12-27T07:49:43Z | - |
dc.date.issued | 2007 | - |
dc.identifier.uri | https://scholars.lib.ntu.edu.tw/handle/123456789/443432 | - |
dc.relation.ispartof | 2007 International Semiconductor Device Research Symposium | - |
dc.title | Self-aligned inversion n-channel In<inf>0.2</inf>Ga<inf>0.8</inf>As/GaAs MOSFET with TiN gate and Ga<inf>2</inf>O<inf>3</inf> (Gd<inf>2</inf>O <inf>3</inf>) dielectric | - |
dc.type | conference paper | en |
dc.identifier.doi | 10.1109/ISDRS.2007.4422234 | - |
dc.identifier.scopus | 2-s2.0-44949102459 | - |
dc.identifier.url | https://www.scopus.com/inward/record.uri?eid=2-s2.0-44949102459&doi=10.1109%2fISDRS.2007.4422234&partnerID=40&md5=0e396c14b3ed56fea1225f7d765d6f6d | - |
item.openairetype | conference paper | - |
item.fulltext | no fulltext | - |
item.openairecristype | http://purl.org/coar/resource_type/c_5794 | - |
item.grantfulltext | none | - |
item.cerifentitytype | Publications | - |
crisitem.author.dept | Applied Physics | - |
crisitem.author.dept | Center for Condensed Matter Sciences | - |
crisitem.author.dept | Electronics Engineering | - |
crisitem.author.dept | Physics | - |
crisitem.author.orcid | 0000-0003-4657-0933 | - |
crisitem.author.parentorg | College of Science | - |
crisitem.author.parentorg | Others: University-Level Research Centers | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Science | - |
顯示於: | 物理學系 |
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