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College of Science / 理學院
Physics / 物理學系
Structural and electrical characteristics of atomic layer deposited high 庥 HfO2on GaN
Details
Structural and electrical characteristics of atomic layer deposited high 庥 HfO2on GaN
Journal
Applied Physics Letters
Journal Volume
90
Journal Issue
23
Date Issued
2007
Author(s)
Chang, Y.C.
Chiu, H.C.
Lee, Y.J.
Huang, M.L.
Lee, K.Y.
MINGHWEI HONG
Chiu, Y.N.
Kwo, J.
Wang, Y.H.
DOI
10.1063/1.2746057
URI
https://scholars.lib.ntu.edu.tw/handle/123456789/443437
URL
https://www.scopus.com/inward/record.uri?eid=2-s2.0-34250703717&doi=10.1063%2f1.2746057&partnerID=40&md5=7dd9a84404ef3b7011f73a5e887c7943
Type
journal article