MBE grown high 庥 dielectrics Ga2O3(Gd2O3) on GaN
Journal
Journal of Crystal Growth
Journal Issue
SPEC. ISS.
Pages
390-393
Date Issued
2007
Author(s)
Abstract
High κ Ga2O3(Gd2O3) dielectric was deposited on n-type GaN (0 0 0 1) using molecular beam epitaxy (MBE). TiN/Ga2O3(Gd2O3)/GaN metal-oxide-semiconductor (MOS) diodes have exhibited a negligible frequency dispersion, low leakage currents (∼10-8 A/cm2), and a low interfacial density of states (Dit) of 1011 cm-2 eV-1 at the midgap. Well-behaved capacitance-voltage (C{single bond}V) curves with accumulation and depletion behaviors were shown, with a dielectric constant of 14.7. Forming gas annealing at 600 °C has reduced the frequency dispersion in the C{single bond}V curves. A sharp oxide/semiconductor interface was shown by high-resolution transmission electron microscopy (HR-TEM). © 2007.
SDGs
Type
journal article