Effect of Al incorporation in the thermal stability of atomic-layer-deposited HfO2 for gate dielectric applications

Journal

Journal of the Electrochemical Society

Journal Volume

154

Journal Issue

4

Pages

G99-G102

Date Issued

2007

Author(s)

Chiou, Y.-K.

Chang, C.-H.

Wang, C.-C.

Lee, K.-Y.

Wu, T.-B.

Kwo, R.

DOI

10.1149/1.2472562

URI

https://scholars.lib.ntu.edu.tw/handle/123456789/443447

URL

https://www.scopus.com/inward/record.uri?eid=2-s2.0-33947173848&doi=10.1149%2f1.2472562&partnerID=40&md5=030ac9e7b06536b84dca253badcbb573

Type

journal article