Effect of Al incorporation in the thermal stability of atomic-layer-deposited HfO2 for gate dielectric applications
Journal
Journal of the Electrochemical Society
Journal Volume
154
Journal Issue
4
Pages
G99-G102
Date Issued
2007
Author(s)
Abstract
The thermal stability in structural and electrical properties of , alloy, and stack thin films prepared by atomic layer deposition were comparatively investigated. Both and exhibit improved property against thermal degradation compared to the film. However, the incorporation of Al in alloy form provides characteristics superior to that in stack structure by retaining an amorphous structure up to 1000°C, which suppresses the leakage current and retards the growth of interfacial layer giving rise to lower increment of equivalent-oxide-thickness and interface trap density.
Type
journal article