https://scholars.lib.ntu.edu.tw/handle/123456789/443454
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Huang, M.L. | en_US |
dc.contributor.author | Chang, Y.C. | en_US |
dc.contributor.author | Chang, C.H. | en_US |
dc.contributor.author | Lin, T.D. | en_US |
dc.contributor.author | Kwo, J. | en_US |
dc.contributor.author | Wu, T.B. | en_US |
dc.contributor.author | Hong, M. | en_US |
dc.contributor.author | MINGHWEI HONG | zz |
dc.creator | Huang, M.L.;Chang, Y.C.;Chang, C.H.;Lin, T.D.;Kwo, J.;Wu, T.B.;Hong, M. | - |
dc.date.accessioned | 2019-12-27T07:49:48Z | - |
dc.date.available | 2019-12-27T07:49:48Z | - |
dc.date.issued | 2006 | - |
dc.identifier.uri | https://scholars.lib.ntu.edu.tw/handle/123456789/443454 | - |
dc.relation.ispartof | Applied Physics Letters | - |
dc.title | Energy-band parameters of atomic-layer-deposition Al<inf>2</inf>O <inf>3</inf>/InGaAs heterostructure | - |
dc.type | journal article | en |
dc.identifier.doi | 10.1063/1.2218826 | - |
dc.identifier.scopus | 2-s2.0-33745801289 | - |
dc.identifier.url | https://www.scopus.com/inward/record.uri?eid=2-s2.0-33745801289&doi=10.1063%2f1.2218826&partnerID=40&md5=ca159645baaad406b9be1a493cbd4cb0 | - |
dc.relation.journalvolume | 89 | - |
dc.relation.journalissue | 1 | - |
item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
item.openairetype | journal article | - |
item.grantfulltext | none | - |
item.cerifentitytype | Publications | - |
item.fulltext | no fulltext | - |
crisitem.author.dept | Applied Physics | - |
crisitem.author.dept | Center for Condensed Matter Sciences | - |
crisitem.author.dept | Electronics Engineering | - |
crisitem.author.dept | Physics | - |
crisitem.author.orcid | 0000-0003-4657-0933 | - |
crisitem.author.parentorg | College of Science | - |
crisitem.author.parentorg | Others: University-Level Research Centers | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Science | - |
顯示於: | 物理學系 |
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