https://scholars.lib.ntu.edu.tw/handle/123456789/444885
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Wu, D.-C. | en_US |
dc.contributor.author | Shiao, J.-C. | en_US |
dc.contributor.author | Lin, C.-H. | en_US |
dc.contributor.author | Chen, C.-H. | en_US |
dc.contributor.author | Liao, C.-H. | en_US |
dc.contributor.author | Hsu, W.-C. | en_US |
dc.contributor.author | Lu, W.-H. | en_US |
dc.contributor.author | Lan, C.-W. | en_US |
dc.contributor.author | CHUNG-WEN LAN | en_US |
dc.creator | CHUNG-WEN LAN;Lan, C.-W.;Lu, W.-H.;Hsu, W.-C.;Liao, C.-H.;Chen, C.-H.;Lin, C.-H.;Shiao, J.-C.;Wu, D.-C. | - |
dc.date.accessioned | 2020-01-06T03:04:52Z | - |
dc.date.available | 2020-01-06T03:04:52Z | - |
dc.date.issued | 2010 | - |
dc.identifier.uri | https://scholars.lib.ntu.edu.tw/handle/123456789/444885 | - |
dc.description.abstract | Dark current-voltage (I-V) curves are usually used to analyze the electric characteristics of solar cell device based on one-diode and two-diode equivalent circuit models. In this study, we extracted the parameters from dark I-V with Neider-Mead algorithm and repeated error estimation method based on two-diode circuit model. If we give one set of initial values of the parameters into the Neider-Mead algorithm, such evaluation method will show us one set of reasonable fitting results. Therefore, we will get the best fitting results after a series of set initial values evaluation based on our repeated algorithm process. The final fitting results showed that trends of F.F. were fully influenced by series resistances. With thicker p-layer, they demonstrated larger ideality factors and less short-circuit current densities. Short-circuit current densities show the opposite trend with respect to ideality factors in p-layer solar cell. However, the insertion of intrinsic thin-layer between p-layer and n-type c-Si can reduce the ideality factor. We found the calculated VOC extracted from the dark I-V was consistent to the measured VOC from standard solar simulator. The insertion of i-layer greatly reduced the J01 and hence enhanced the VOC. © 2010 IEEE. | - |
dc.relation.ispartof | Conference Record of the IEEE Photovoltaic Specialists Conference | - |
dc.subject.classification | [SDGs]SDG7 | - |
dc.subject.other | Comprehensive studies; Dark current-voltage; Diode circuits; Electric characteristics; Equivalent circuit model; Error estimations; Evaluation Method; Fitting results; Fundamental parameters; I-layer; Ideality factors; Initial values; IV characteristics; P-layer; Series resistances; Solar simulator; Thin layers; Algorithms; Circuit theory; Diodes; Parameter estimation; Photovoltaic effects; Solar cells; Switching circuits; Current voltage characteristics | - |
dc.title | Fundamental parameters extraction from dark I-V characteristics: A comprehensive study on amorphous/crystalline silicon hetero-junction solar cell | en_US |
dc.type | conference paper | en |
dc.identifier.doi | 10.1109/PVSC.2010.5616817 | - |
dc.identifier.scopus | 2-s2.0-78650110963 | - |
dc.identifier.url | https://www.scopus.com/inward/record.uri?eid=2-s2.0-78650110963&doi=10.1109%2fPVSC.2010.5616817&partnerID=40&md5=5d8e769a416213b3517f46710436fef2 | - |
dc.relation.pages | 2751-2755 | - |
item.openairecristype | http://purl.org/coar/resource_type/c_5794 | - |
item.openairetype | conference paper | - |
item.grantfulltext | none | - |
item.cerifentitytype | Publications | - |
item.fulltext | no fulltext | - |
crisitem.author.dept | Chemical Engineering | - |
crisitem.author.orcid | 0000-0003-4141-2741 | - |
crisitem.author.parentorg | College of Engineering | - |
顯示於: | 化學工程學系 |
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