https://scholars.lib.ntu.edu.tw/handle/123456789/445892
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chen, Yanping | en_US |
dc.contributor.author | He, Zhongyuan | en_US |
dc.contributor.author | Li, Yaogang | en_US |
dc.contributor.author | Zhang, Qinghong | en_US |
dc.contributor.author | Hou, Chengyi | en_US |
dc.contributor.author | Wang, Hongzhi | en_US |
dc.contributor.author | YAN-PING CHEN | zz |
dc.creator | YAN-PING CHEN;Wang, Hongzhi;Hou, Chengyi;Zhang, Qinghong;Li, Yaogang;He, Zhongyuan;Chen, Yanping | - |
dc.date.accessioned | 2020-01-06T03:11:40Z | - |
dc.date.available | 2020-01-06T03:11:40Z | - |
dc.date.issued | 2018 | - |
dc.identifier.issn | 1567-1739 | - |
dc.identifier.uri | https://scholars.lib.ntu.edu.tw/handle/123456789/445892 | - |
dc.relation.ispartof | Current Applied Physics | - |
dc.title | Regulation of precursor solution concentration for In-Zn oxide thin film transistors | en_US |
dc.type | journal article | - |
dc.identifier.doi | 10.1016/j.cap.2018.07.009 | - |
dc.identifier.isi | WOS:000446676900023 | - |
dc.relation.pages | 1300-1305 | - |
dc.relation.journalvolume | 18 | - |
dc.relation.journalissue | 11 | - |
item.fulltext | no fulltext | - |
item.openairetype | journal article | - |
item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
item.cerifentitytype | Publications | - |
item.grantfulltext | none | - |
crisitem.author.orcid | 0000-0002-2500-2286 | - |
Appears in Collections: | 化學工程學系 |
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