https://scholars.lib.ntu.edu.tw/handle/123456789/447942
Title: | Non-Volatile Ferroelectric FETs Using 5-nm Hf<inf>0.5</inf>Zr<inf>0.5</inf>O<inf>2</inf> with High Data Retention and Read Endurance for 1T Memory Applications | Authors: | Chen, K.-T. Chen, H.-Y. Liao, C.-Y. Siang, G.-Y. Lo, C. Liao, M.-H. Li, K.-S. Chang, S.T. Lee, M.H. MING-HAN LIAO |
Issue Date: | 2019 | Journal Volume: | 40 | Journal Issue: | 3 | Start page/Pages: | 399-402 | Source: | IEEE Electron Device Letters | URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/447942 | DOI: | 10.1109/LED.2019.2896231 |
Appears in Collections: | 機械工程學系 |
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