https://scholars.lib.ntu.edu.tw/handle/123456789/448571
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Ho, W. S. | en_US |
dc.contributor.author | Huang, C.-F. | en_US |
dc.contributor.author | Chang, S. T. | en_US |
dc.contributor.author | CHEE-WEE LIU | en_US |
dc.contributor.author | YAO-JOE YANG | en_US |
dc.creator | YAO-JOE YANG;Liu, C. W.;Chang, S. T.;Huang, C.-F.;Ho, W. S.;Yang, Y.-J. | - |
dc.date.accessioned | 2020-01-13T08:25:15Z | - |
dc.date.available | 2020-01-13T08:25:15Z | - |
dc.date.issued | 2007 | - |
dc.identifier.issn | 00036951 | - |
dc.identifier.uri | https://scholars.lib.ntu.edu.tw/handle/123456789/448571 | - |
dc.identifier.uri | https://www.scopus.com/inward/record.uri?eid=2-s2.0-34548511986&doi=10.1063%2f1.2779845&partnerID=40&md5=fc264e0994d3eb66ee4f4e7b40dfbddd | - |
dc.description.abstract | The dependence of electron mobility on strain, channel direction, and substrate orientation is theoretically studied for the germanium n -channel metal-oxide-semiconductor field-effect transistors. For the unstrained channel, (111) substrate can provide the highest mobility among the three orientations, mainly due to its largest quantization mass and smallest conductivity mass in L valley. The tensile strain parallel to the [1- 10] channel direction on (111) substrate gives 4.1 times mobility of Si at 1 MVcm, and the mobility enhancement starts to saturate for the strain larger than 0.5%. The compressive strain of ∼1.5% transverse to [1- 10] on (111) substrate yields 2.9 times mobility enhancement at 1 MVcm. © 2007 American Institute of Physics. | - |
dc.relation.ispartof | Applied Physics Letters | - |
dc.subject.other | Compressive stress; Crystal orientation; Field effect transistors; MOS devices; Tensile strain; Conductivity mass; Electron mobility enhancement; Quantization mass; Substrate orientation; Electron mobility | - |
dc.title | Electron mobility enhancement in strained-germanium n-channel metal-oxide-semiconductor field-effect transistors | en_US |
dc.type | journal article | en |
dc.identifier.doi | 10.1063/1.2779845 | - |
dc.identifier.scopus | 2-s2.0-34548511986 | - |
dc.identifier.isi | WOS:000249322900024 | - |
dc.relation.pages | 102103 | - |
dc.relation.journalvolume | 91 | - |
dc.relation.journalissue | 10 | - |
item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
item.openairetype | journal article | - |
item.grantfulltext | open | - |
item.cerifentitytype | Publications | - |
item.fulltext | with fulltext | - |
crisitem.author.dept | Electronics Engineering | - |
crisitem.author.dept | Photonics and Optoelectronics | - |
crisitem.author.dept | Electrical Engineering | - |
crisitem.author.dept | Center for Condensed Matter Sciences | - |
crisitem.author.dept | MediaTek-NTU Research Center | - |
crisitem.author.dept | Center for Artificial Intelligence and Advanced Robotics | - |
crisitem.author.dept | Mechanical Engineering | - |
crisitem.author.orcid | 0000-0002-6439-8754 | - |
crisitem.author.orcid | 0000-0003-3253-0500 | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | Others: University-Level Research Centers | - |
crisitem.author.parentorg | Others: University-Level Research Centers | - |
crisitem.author.parentorg | Others: University-Level Research Centers | - |
crisitem.author.parentorg | College of Engineering | - |
顯示於: | 機械工程學系 |
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