Achieving a Low Interfacial Density of States with a Flat Distribution in High-kappa Ga2O3(Gd2O3) Directly Deposited on Ge
Resource
APPLIED PHYSICS EXPRESS, 4(11), 111101
Journal
Applied Physics Express
Pages
111101
Date Issued
2011
Date
2011
Author(s)
Lin, Chunan
Lin, Hanchung
Chiang, Tsunghung
Chu, Reilin
Chu, Lungkun
Lin, Tsungda
Chang, Yaochung
Wang, Wei-E
Kwo, J.Raynien
Abstract
The interfacial density of states (Dit) distribution of high-κ dielectric Ga2O3(Gd2O3) [GGO] directly deposited on n-type Ge(100) without invoking any interfacial passivation layer (IPL) was established using conductance measurements and charge pumping (CP) technique. The conductance measurements yielded Dit values in the range of (1–4)×1011 cm-2 eV-1 from the mid-gap energy to the conduction band edge within the Ge band gap, which are consistent with the mean Dit value of ∼2×1011 cm-2 eV-1 near the mid-gap obtained independently by the CP method. The flat Dit distribution at the conduction band edge compares favorably with those attained using IPLs such as SiO2/Si-cap and GeO2.
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Type
journal article
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