https://scholars.lib.ntu.edu.tw/handle/123456789/491140
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Wu, J. J. | en_US |
dc.contributor.author | Chen, K. H. | en_US |
dc.contributor.author | Wen, C. Y. | en_US |
dc.contributor.author | Chen, L. C. | en_US |
dc.contributor.author | Wang, J. K. | en_US |
dc.contributor.author | Yu, Y. C. | en_US |
dc.contributor.author | Wang, C. W. | en_US |
dc.contributor.author | CHENG-YEN WEN | en_US |
dc.contributor.author | LI-CHYONG CHEN | en_US |
dc.contributor.author | Wang, J.-K. | en_US |
dc.creator | CHENG-YEN WEN;Lin, E. K.;Wang, C. W.;Yu, Y. C.;Wang, J. K.;Chen, L. C.;Wen, C. Y.;Chen, K. H.;Wu, J. J. | - |
dc.date.accessioned | 2020-05-12T02:49:42Z | - |
dc.date.available | 2020-05-12T02:49:42Z | - |
dc.date.issued | 2000 | - |
dc.identifier.issn | 0959-9428 | - |
dc.identifier.uri | https://scholars.lib.ntu.edu.tw/handle/123456789/491140 | - |
dc.relation.ispartof | Journal of Materials Chemistry | - |
dc.title | Effect of H-2 addition on SiCN film growth in an electron cyclotron resonance plasma chemical vapor deposition reactor | en_US |
dc.type | journal article | en |
dc.identifier.doi | 10.1039/a908523h | - |
dc.identifier.isi | WOS:000085886200034 | - |
dc.relation.pages | 783-787 | - |
dc.relation.journalvolume | 10 | - |
dc.relation.journalissue | 3 | - |
item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
item.openairetype | journal article | - |
item.grantfulltext | none | - |
item.cerifentitytype | Publications | - |
item.fulltext | no fulltext | - |
crisitem.author.dept | Center for Condensed Matter Sciences | - |
crisitem.author.dept | Center for Condensed Matter Sciences | - |
crisitem.author.parentorg | Others: University-Level Research Centers | - |
crisitem.author.parentorg | Others: University-Level Research Centers | - |
顯示於: | 材料科學與工程學系 |
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