https://scholars.lib.ntu.edu.tw/handle/123456789/491645
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Shiojiri, M. | en_US |
dc.contributor.author | Chuo, C.C. | en_US |
dc.contributor.author | Hsu, J.T. | en_US |
dc.contributor.author | Yang, J.R. | en_US |
dc.contributor.author | Saijo, H. | en_US |
dc.contributor.author | JER-REN YANG | en_US |
dc.creator | JER-REN YANG;Saijo, H.;Yang, J.R.;Hsu, J.T.;Chuo, C.C.;Shiojiri, M. | - |
dc.date.accessioned | 2020-05-12T02:51:25Z | - |
dc.date.available | 2020-05-12T02:51:25Z | - |
dc.date.issued | 2006 | - |
dc.identifier.uri | https://scholars.lib.ntu.edu.tw/handle/123456789/491645 | - |
dc.relation.ispartof | Journal of Applied Physics | - |
dc.title | Structure and formation mechanism of V defects in multiple InGaN/GaN quantum well layers | en_US |
dc.type | journal article | en |
dc.identifier.doi | 10.1063/1.2180532 | - |
dc.identifier.scopus | 2-s2.0-33645920309 | - |
dc.identifier.url | https://www.scopus.com/inward/record.uri?eid=2-s2.0-33645920309&doi=10.1063%2f1.2180532&partnerID=40&md5=71054b4b1e99b4ec32c1ae8b9c7387fc | - |
dc.relation.journalvolume | 99 | - |
dc.relation.journalissue | 7 | - |
item.fulltext | no fulltext | - |
item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
item.cerifentitytype | Publications | - |
item.openairetype | journal article | - |
item.grantfulltext | none | - |
crisitem.author.dept | Materials Science and Engineering | - |
crisitem.author.orcid | 0000-0001-7897-7039 | - |
crisitem.author.parentorg | College of Engineering | - |
顯示於: | 材料科學與工程學系 |
在 IR 系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。