https://scholars.lib.ntu.edu.tw/handle/123456789/497373
標題: | Power-amplifier modules covering 70-113 GHz using MMICs | 作者: | Samoska, L. Gaier, T. Peralta, A. Liao, H.-H. Leong, Y.C. Weinreb, S. Chen, Y.C. Nishimoto, M. Lai, R. HUEI WANG |
關鍵字: | High electron mobility transistors; Microprocessor chips; Microstrip lines; Millimeter wave devices; Monolithic microwave integrated circuits; Oscillators (electronic); Semiconducting aluminum compounds; Semiconducting indium gallium arsenide; Waveguides; Aluminum gallium arsenide; Power amplifiers | 公開日期: | 2001 | 卷: | 49 | 期: | 1 | 起(迄)頁: | 9-16 | 來源出版物: | IEEE Transactions on Microwave Theory and Techniques | 摘要: | A set of W-band power amplifier (PA) modules using monolithic microwave integrated circuits (MMICs) have been developed for the local oscillators of the far-infrared and sub-millimeter telescope (FIRST). The MMIC PA chips include three driver and three PAs, designed using microstrip lines, and another two smaller driver amplifiers using coplanar waveguides, covering the entire W-band. The highest frequency PA, which covers 100-113 GHz, has a peak power of greater than 250 mW (25 dBm) at 105 GHz, which is the best output power performance for a monolithic amplifier above 100 GHz to date. These monolithic PA chips are fabricated using 0.1-μm AlGaAs/InGaAs/GaAs pseudomorphic T-gate power high electron-mobility transistors on a 2-mil GaAs substrate. The module assembly and testing, together with the system applications, will also be addressed in this paper. Index Terms-GaAs, HEMT, millimeter wave, MMIC, power-amplifier module. © 2001 IEEE. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-0034831707&doi=10.1109%2f22.899956&partnerID=40&md5=daf8655e974638a80f2e64a80ada7bbf | DOI: | 10.1109/22.899956 |
顯示於: | 電機工程學系 |
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