Monolithic 23.5 to 94 GHz Frequency Quadrupler Using 0.1 Pseudomorphic μm AlGaAs/InGaAs/GaAs HEMT Technology
Journal
IEEE Microwave and Guided Wave Letters
Journal Volume
4
Journal Issue
3
Pages
77-79
Date Issued
1994
Author(s)
Abstract
A monolithic 23.5 to 94 GHz frequency quadrupler based on 0.1 μm pseudomorphic AlGaAs/lnGaAs/GaAs high electron mobility transistor technology has been developed. This frequency quadrupler consists of a 23.5 to 47 GHz doubler, a 47 to 94 GHz doubler, and a 47 GHz buffer amplifier between the two doublers. It exhibits a measured conversion loss of 5-7 dB at the output frequency from 94 to 98 GHz. To our knowledge, this is the first reported W-band (75-110 GHz) monolithic frequency quadrupler using HEMT technology. It can be integrated with 23.5 GHz VCOs to construct low phase noise and stable frequency sources around 94 GHz. © 1993 Institute of Electrical and Electronics Engineers Inc.. All rights reserved.
Other Subjects
Aluminum gallium arsenide; Gallium compounds; Electron transport properties; Frequency multiplying circuits; Gallium compounds; Mathematical models; Oscillators (electronic); AlGaAs/InGaAs/GaAs; Conversion loss; Doublers; GaAs HEMT; GHz frequencies; High electron-mobility transistors; Low-phase-noise; Monolithics; Output frequency; W bands; High electron mobility transistors; Field effect transistors; Electron mobility; Frequency quadrupler; Pseudomorphic technology
Type
journal article