https://scholars.lib.ntu.edu.tw/handle/123456789/497384
Title: | Monolithic 23.5 to 94 GHz Frequency Quadrupler Using 0.1 Pseudomorphic μm AlGaAs/InGaAs/GaAs HEMT Technology | Authors: | Chang, K.W. Lo, D.C.W. Tan, K.L. Streit, D. Dow, G.S. Allen, B.R. HUEI WANG |
Issue Date: | 1994 | Journal Volume: | 4 | Journal Issue: | 3 | Start page/Pages: | 77-79 | Source: | IEEE Microwave and Guided Wave Letters | Abstract: | A monolithic 23.5 to 94 GHz frequency quadrupler based on 0.1 μm pseudomorphic AlGaAs/lnGaAs/GaAs high electron mobility transistor technology has been developed. This frequency quadrupler consists of a 23.5 to 47 GHz doubler, a 47 to 94 GHz doubler, and a 47 GHz buffer amplifier between the two doublers. It exhibits a measured conversion loss of 5-7 dB at the output frequency from 94 to 98 GHz. To our knowledge, this is the first reported W-band (75-110 GHz) monolithic frequency quadrupler using HEMT technology. It can be integrated with 23.5 GHz VCOs to construct low phase noise and stable frequency sources around 94 GHz. © 1993 Institute of Electrical and Electronics Engineers Inc.. All rights reserved. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-0027814113&partnerID=40&md5=a6c637abcbb8e88e15c8c582f31d3036 | DOI: | 10.1109/75.275586 | SDG/Keyword: | Aluminum gallium arsenide; Gallium compounds; Electron transport properties; Frequency multiplying circuits; Gallium compounds; Mathematical models; Oscillators (electronic); AlGaAs/InGaAs/GaAs; Conversion loss; Doublers; GaAs HEMT; GHz frequencies; High electron-mobility transistors; Low-phase-noise; Monolithics; Output frequency; W bands; High electron mobility transistors; Field effect transistors; Electron mobility; Frequency quadrupler; Pseudomorphic technology |
Appears in Collections: | 電機工程學系 |
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