https://scholars.lib.ntu.edu.tw/handle/123456789/497393
標題: | A 94-GHz 130-mW InGaAs/InAlAs/InP HEMT high-power MMIC amplifier | 作者: | Chen, Y.C. Lai, R. Lin, E. Block, T. Yen, H.C. Streit, D. Jones, W. Liu, P.H. Dia, R.M. Huang, P.-P. HUEI WANG TIAN-WEI HUANG |
公開日期: | 1997 | 卷: | 7 | 期: | 5 | 起(迄)頁: | 133-135 | 來源出版物: | IEEE Microwave and Guided Wave Letters | 摘要: | We have developed W-band high-power monolithic microwave integrated circuit (MMIC) amplifiers using passivated 0.15-μm gate length InGaAs/InAlAs/InP HEMT's. A 640-μm single-stage MMIC amplifier demonstrated an output power of 130 mW with 13% power-added efficiency and 4-dB associated gain at 94 GHz. This result represents the best output power to date measured from a single fixtured InP-based HEMT MMIC at this frequency. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-0031144703&doi=10.1109%2f75.569728&partnerID=40&md5=4d9c6afa2115748b3a4af0f919d3bc13 | DOI: | 10.1109/75.569728 | SDG/關鍵字: | Current voltage characteristics; Gain measurement; High electron mobility transistors; Integrated circuit manufacture; Optimization; Power amplifiers; Semiconducting gallium arsenide; Semiconducting indium phosphide; High power monolithic microwave integrated circuit (MMIC) amplifiers; Monolithic microwave integrated circuits |
顯示於: | 電機工程學系 |
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