A Ku-band CMOS low-noise amplifier
Journal
Proceedings - 2005 IEEE International Workshop on Radio-Frequency Integration Technology: Integrated Circuits for Wideband Communication and Wireless Sensor Networks, RFIT 2005
Journal Volume
2005
Pages
183-186
Date Issued
2005
Author(s)
Abstract
A Ku-band monolithic low-noise amplifier is presented in this paper. This LNA fabricated in commercial 0.18-μm CMOS technology is a two-stage common-source design instead of cascode configuration for lower noise performance. This CMOS LNA demonstrates a gain of better than 10 dB and a NF of better than 3.2 dB from 14 to 15 GHz. The measured output P1dB is about 5.2 dBm and input IP3 is 1.6 dBm. The chip size including all testing pads is 0.88 × 0.77 mm2.
Subjects
CMOS; Ku band; Lownoise amplifiers; Microwave; RFIC
Type
conference paper