https://scholars.lib.ntu.edu.tw/handle/123456789/497815
Title: | Combining High Hole Concentration in p-GaN and High Mobility in u-GaN for High p-Type Conductivity in a p-GaN/u-GaN Alternating-Layer Nanostructure | Authors: | Chen, H.-T. Su, C.-Y. Tu, C.-G. Yao, Y.-F. Lin, C.-H. Wu, Y.-R. Kiang, Y.-W. Yang, C.-C.C.C. YEAN-WOEI KIANG |
Issue Date: | 2017 | Journal Volume: | 64 | Journal Issue: | 1 | Start page/Pages: | 115-120 | Source: | IEEE Transactions on Electron Devices | URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/497815 | DOI: | 10.1109/TED.2016.2631148 |
Appears in Collections: | 電機工程學系 |
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