Combining High Hole Concentration in p-GaN and High Mobility in u-GaN for High p-Type Conductivity in a p-GaN/u-GaN Alternating-Layer Nanostructure

Journal

IEEE Transactions on Electron Devices

Journal Volume

64

Journal Issue

1

Pages

115-120

Date Issued

2017

Author(s)

Chen, H.-T.

Su, C.-Y.

Tu, C.-G.

Yao, Y.-F.

Lin, C.-H.

Wu, Y.-R.

Kiang, Y.-W.

Yang, C.-C.

YEAN-WOEI KIANG

DOI

10.1109/TED.2016.2631148

URI

https://scholars.lib.ntu.edu.tw/handle/123456789/497815

URL

https://www.scopus.com/inward/record.uri?eid=2-s2.0-85001104688&doi=10.1109%2fTED.2016.2631148&partnerID=40&md5=9d97d06abdafdf27816d55ac713c7623

Type

journal article