https://scholars.lib.ntu.edu.tw/handle/123456789/497815
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chen, H.-T. | en_US |
dc.contributor.author | Su, C.-Y. | en_US |
dc.contributor.author | Tu, C.-G. | en_US |
dc.contributor.author | Yao, Y.-F. | en_US |
dc.contributor.author | Lin, C.-H. | en_US |
dc.contributor.author | Wu, Y.-R. | en_US |
dc.contributor.author | Kiang, Y.-W. | en_US |
dc.contributor.author | Yang, C.-C.C.C. | en_US |
dc.contributor.author | YEAN-WOEI KIANG | zz |
dc.creator | Chen, H.-T.;Su, C.-Y.;Tu, C.-G.;Yao, Y.-F.;Lin, C.-H.;Wu, Y.-R.;Kiang, Y.-W.;Yang, C.-C.C.C. | - |
dc.date.accessioned | 2020-06-11T06:12:01Z | - |
dc.date.available | 2020-06-11T06:12:01Z | - |
dc.date.issued | 2017 | - |
dc.identifier.uri | https://scholars.lib.ntu.edu.tw/handle/123456789/497815 | - |
dc.relation.ispartof | IEEE Transactions on Electron Devices | - |
dc.title | Combining High Hole Concentration in p-GaN and High Mobility in u-GaN for High p-Type Conductivity in a p-GaN/u-GaN Alternating-Layer Nanostructure | en_US |
dc.type | journal article | en |
dc.identifier.doi | 10.1109/TED.2016.2631148 | - |
dc.identifier.scopus | 2-s2.0-85001104688 | - |
dc.identifier.url | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85001104688&doi=10.1109%2fTED.2016.2631148&partnerID=40&md5=9d97d06abdafdf27816d55ac713c7623 | - |
dc.relation.pages | 115-120 | - |
dc.relation.journalvolume | 64 | - |
dc.relation.journalissue | 1 | - |
item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
item.openairetype | journal article | - |
item.grantfulltext | none | - |
item.cerifentitytype | Publications | - |
item.fulltext | no fulltext | - |
crisitem.author.dept | Photonics and Optoelectronics | - |
crisitem.author.dept | Electrical Engineering | - |
crisitem.author.orcid | 0000-0002-6441-2595 | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
顯示於: | 電機工程學系 |
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