Effect of ingaas capping layer on the properties of InAs/InGaAs quantum dots and lasers
Journal
Applied Physics Letters
Journal Volume
82
Journal Issue
25
Pages
4477-4479
Date Issued
2003
Author(s)
Abstract
The properties of InAs/InGaAs quantum dots and lasers were examined and the effect of InGaAs capping layer on these properties was also studied. The quantum dots were grown by gas-source molecular-beam epitaxy. The analysis showed that the quantum-dot density can be controllably changed from 2.3×1010 to 1.7×1011 cm-2 by using different capping methods.
Other Subjects
Current density; Ground state; Molecular beam epitaxy; Photoluminescence; Semiconducting indium gallium arsenide; Semiconductor lasers; Gas-source molecular-beam epitaxy; Semiconductor quantum dots
Type
journal article