https://scholars.lib.ntu.edu.tw/handle/123456789/498122
Title: | Effect of ingaas capping layer on the properties of InAs/InGaAs quantum dots and lasers | Authors: | Chang, F.Y. HAO-HSIUNG LIN CHUNG-CHIH WU |
Issue Date: | 2003 | Journal Volume: | 82 | Journal Issue: | 25 | Start page/Pages: | 4477-4479 | Source: | Applied Physics Letters | Abstract: | The properties of InAs/InGaAs quantum dots and lasers were examined and the effect of InGaAs capping layer on these properties was also studied. The quantum dots were grown by gas-source molecular-beam epitaxy. The analysis showed that the quantum-dot density can be controllably changed from 2.3×1010 to 1.7×1011 cm-2 by using different capping methods. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-0038383178&doi=10.1063%2f1.1585125&partnerID=40&md5=a37248459f41175f285a43ed54894e4d | DOI: | 10.1063/1.1585125 | SDG/Keyword: | Current density; Ground state; Molecular beam epitaxy; Photoluminescence; Semiconducting indium gallium arsenide; Semiconductor lasers; Gas-source molecular-beam epitaxy; Semiconductor quantum dots |
Appears in Collections: | 電機工程學系 |
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