Top-gate and bottom-gate amorphous ZnO transparent TFTs fabricated by all-etching processes
Journal
Digest of Technical Papers - SID International Symposium
Journal Volume
38
Journal Issue
1
Pages
192-195
Date Issued
2007
Author(s)
Hsieh, H.-H.
Abstract
Abstract Both top‐gate and bottom‐gate amorphous ZnO TTFTs were effectively fabricated by thinning the ZnO layer and by using all‐etching processes. Rather high field‐effect mobilities of 25 cm 2 /Vs and 4 cm 2 /Vs and on/off current ratios of >10 7 and >10 6 were achieved for top‐gate and bottom‐gate configurations, respectively.
SDGs
Type
conference paper