https://scholars.lib.ntu.edu.tw/handle/123456789/498190
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Hsieh, H.-H. | en_US |
dc.contributor.author | Chen, H.-S. | en_US |
dc.contributor.author | Hung, P.-H. | en_US |
dc.contributor.author | LIANG-HUNG LU | en_US |
dc.creator | Hsieh, H.-H.;Chen, H.-S.;Hung, P.-H.;Lu, L.-H. | - |
dc.date.accessioned | 2020-06-11T06:16:53Z | - |
dc.date.available | 2020-06-11T06:16:53Z | - |
dc.date.issued | 2011 | - |
dc.identifier.issn | 10638210 | - |
dc.identifier.uri | https://scholars.lib.ntu.edu.tw/handle/123456789/498190 | - |
dc.identifier.uri | https://www.scopus.com/inward/record.uri?eid=2-s2.0-79953101276&doi=10.1109%2fTVLSI.2009.2037885&partnerID=40&md5=0f7a0b06a5b2dba4d29bc08cb3b9e5d8 | - |
dc.description.abstract | This paper presents experimental CMOS RF frontends suitable for ultra-low-power and ultra-low-voltage operations. In order to achieve the desirable gain and linearity of the receiver chain at a reduced supply voltage, the current-reused bias technique and the multiple-gated transistors are employed. As for the transmitter frontend, a low-voltage double-balanced mixer is utilized to maximize the conversion gain. In addition, a differential-to- single-ended circuit is also included to increase the saturated output power. Using a standard 0.18-μm CMOS process, the proposed circuits are realized for 5-GHz RF applications with a supply voltage of 0.6 V. The fabricated receiver frontend demonstrates a conversion gain of 14.5 dB and an IIP3 of -16 dBm with a power consumption of 2.1 mW, while the conversion gain and the output 1-dB compression of the transmitter frontend are 12.9 dB and -4.1 dBm, respectively, provided a dc power of 6 mW. © 2006 IEEE. | - |
dc.relation.ispartof | IEEE Transactions on Very Large Scale Integration (VLSI) Systems | - |
dc.subject | CMOS RFIC; current-reused bias technique; low-power; low-voltage; moderate inversion; multiple-gated transistors; receiver frontend; transmitter frontend | - |
dc.subject.other | CMOS RFIC; current-reused bias technique; Low Power; Low-voltage; Moderate inversion; multiple-gated transistors; receiver frontend; CMOS integrated circuits; DC power transmission; Transmitters; Bias voltage | - |
dc.title | Experimental 5-GHz RF frontends for ultra-low-voltage and ultra-low-power operations | en_US |
dc.type | journal article | en |
dc.identifier.doi | 10.1109/TVLSI.2009.2037885 | - |
dc.identifier.scopus | 2-s2.0-79953101276 | - |
dc.relation.pages | 705-709 | - |
dc.relation.journalvolume | 19 | - |
dc.relation.journalissue | 4 | - |
item.fulltext | no fulltext | - |
item.openairetype | journal article | - |
item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
item.grantfulltext | none | - |
item.cerifentitytype | Publications | - |
crisitem.author.dept | Electronics Engineering | - |
crisitem.author.dept | Electrical Engineering | - |
crisitem.author.dept | Communication Engineering | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
顯示於: | 電機工程學系 |
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