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  4. Experimental 5-GHz RF frontends for ultra-low-voltage and ultra-low-power operations
 
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Experimental 5-GHz RF frontends for ultra-low-voltage and ultra-low-power operations

Journal
IEEE Transactions on Very Large Scale Integration (VLSI) Systems
Journal Volume
19
Journal Issue
4
Pages
705-709
Date Issued
2011
Author(s)
Hsieh, H.-H.
Chen, H.-S.
Hung, P.-H.
LIANG-HUNG LU  
DOI
10.1109/TVLSI.2009.2037885
URI
https://scholars.lib.ntu.edu.tw/handle/123456789/498190
https://www.scopus.com/inward/record.uri?eid=2-s2.0-79953101276&doi=10.1109%2fTVLSI.2009.2037885&partnerID=40&md5=0f7a0b06a5b2dba4d29bc08cb3b9e5d8
Abstract
This paper presents experimental CMOS RF frontends suitable for ultra-low-power and ultra-low-voltage operations. In order to achieve the desirable gain and linearity of the receiver chain at a reduced supply voltage, the current-reused bias technique and the multiple-gated transistors are employed. As for the transmitter frontend, a low-voltage double-balanced mixer is utilized to maximize the conversion gain. In addition, a differential-to- single-ended circuit is also included to increase the saturated output power. Using a standard 0.18-μm CMOS process, the proposed circuits are realized for 5-GHz RF applications with a supply voltage of 0.6 V. The fabricated receiver frontend demonstrates a conversion gain of 14.5 dB and an IIP3 of -16 dBm with a power consumption of 2.1 mW, while the conversion gain and the output 1-dB compression of the transmitter frontend are 12.9 dB and -4.1 dBm, respectively, provided a dc power of 6 mW. © 2006 IEEE.
Subjects
CMOS RFIC; current-reused bias technique; low-power; low-voltage; moderate inversion; multiple-gated transistors; receiver frontend; transmitter frontend
Other Subjects
CMOS RFIC; current-reused bias technique; Low Power; Low-voltage; Moderate inversion; multiple-gated transistors; receiver frontend; CMOS integrated circuits; DC power transmission; Transmitters; Bias voltage
Type
journal article

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