https://scholars.lib.ntu.edu.tw/handle/123456789/498238
標題: | Integrated CMOS power sensors for RF BIST applications | 作者: | Hsieh, H.-H. LIANG-HUNG LU |
公開日期: | 2006 | 卷: | 2006 | 起(迄)頁: | 234-238 | 來源出版物: | Proceedings of the IEEE VLSI Test Symposium | 會議論文: | 24th IEEE VLSI Test Symposium | 摘要: | This paper presents the design and experimental results of fully integrated CMOS power sensors for RF built-in self-test (BIST) applications. Using a standard 0.18-μm CMOS process, the power sensors, on-chip terminations and switches are integrated with a 5.2-GHz variable-gain amplifier. Built-in RF test was performed on the amplifier in the vicinity of 5.2 GHz for demonstration, With the proposed built-in power sensors and BIST technique, the circuit parameters of the amplifier including the forward gain and gain compression were extracted without expensive automatic test equipments while minimum performance degradation of the device under test (DUT) is maintained at multi-gigahertz frequencies. © 2006 IEEE. |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/498238 https://www.scopus.com/inward/record.uri?eid=2-s2.0-33751121002&doi=10.1109%2fVTS.2006.40&partnerID=40&md5=2188229265ec4201709dfbb35bd51158 |
DOI: | 10.1109/VTS.2006.40 | SDG/關鍵字: | Built-in self test; Power amplifiers; Sensors; Device under test (DUT); Power sensors; CMOS integrated circuits |
顯示於: | 電機工程學系 |
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