https://scholars.lib.ntu.edu.tw/handle/123456789/498257
標題: | Photoconductive probing and computer simulation of microwave potentials inside a SiGe MMIC | 作者: | David, G. Yang, K. Crites, M. Rieh, J.-S. LIANG-HUNG LU Bhattacharya, P. Katehi, L.P.B. Whitaker, J.F. |
公開日期: | 1998 | 卷: | 1998-September | 起(迄)頁: | 187-191 | 來源出版物: | 1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998 | 會議論文: | 1st Topical Meeting on Silicon Mono1ithic Integrated Circuits in RF Systems, SiRF 1998 | 摘要: | Electrical potentials inside a SiGe MMIC are measured at frequencies up to 20 GHz using a micro-machined photoconductive sampling probe and compared with values predicted using microwave CAD software. The results illustrate that this combination of simulation and in-circuit measurement technique is a powerful tool for performing diagnostics of the microwave performance of Si-based RF circuits. The methodology can be used for applications such as fault isolation and validation of device models, as well as for investigation of the sensitivity of performance to process variations. © 1998 IEEE. |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/498257 https://www.scopus.com/inward/record.uri?eid=2-s2.0-84884210404&doi=10.1109%2fSMIC.1998.750219&partnerID=40&md5=8a3e16c1741a5f238a2ace0f0200a943 |
DOI: | 10.1109/SMIC.1998.750219 | SDG/關鍵字: | Computer aided design; Monolithic integrated circuits; Monolithic microwave integrated circuits; Photoconductivity; Sensitivity analysis; Electrical potential; Fault isolation; Measurement techniques; Micro-machined; Microwave cads; Microwave performance; Process Variation; Sampling probes; Si-Ge alloys |
顯示於: | 電機工程學系 |
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