GeSn N-FinFETs and NiGeSn contact formation by phosphorus implant

Journal

2017 Silicon Nanoelectronics Workshop, SNW 2017

Journal Volume

2017-January

Pages

97-98

Date Issued

2017

Author(s)

Chuang, Y.

Huang, H.-C.

DOI

10.23919/SNW.2017.8242315

URI

https://scholars.lib.ntu.edu.tw/handle/123456789/498464

URL

https://www.scopus.com/inward/record.uri?eid=2-s2.0-85051040284&doi=10.23919%2fSNW.2017.8242315&partnerID=40&md5=0c540d3fca66bf738a84b34c118b6c15

Type

conference paper