https://scholars.lib.ntu.edu.tw/handle/123456789/498466
Title: | High performance complementary Ge peaking FinFETs by room temperature neutral beam oxidation for sub-7 nm technology node applications | Authors: | Lee, Y.-J. Hong, T.-C. Hsueh, F.-K. Sung, P.-J. Chen, C.-Y. Chuang, S.-S. Cho, T.-C. Noda, S. Tsou, Y.-C. Kao, K.-H. Wu, C.-T. Yu, T.-Y. Jian, Y.-L. Su, C.-J. Huang, Y.-M. Huang, W.-H. Chen, B.-Y. Chen, M.-C. Huang, K.-P. Li, J.-Y. Chen, M.-J. Li, Y. Samukawa, S. Wu, W.-F. Huang, G.-W. Shieh, J.-M. Tseng, T.-Y. Chao, T.-S. Wang, Y.-H. Yeh, W.-K. JIUN-YUN LI |
Issue Date: | 2017 | Start page/Pages: | 33.5.1-33.5.4 | Source: | Technical Digest - International Electron Devices Meeting, IEDM | URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/498466 | DOI: | 10.1109/IEDM.2016.7838535 |
Appears in Collections: | 電機工程學系 |
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