https://scholars.lib.ntu.edu.tw/handle/123456789/499677
標題: | Observation of 394 nm electroluminescence from low-temperature sputtered n-ZnOSi O2 thin films on top of the p-GaN heterostructure | 作者: | Chen, C.P. Ke, M.Y. Liu, C.C. Chang, Y.J. Yang, F.H. JIAN-JANG HUANG |
公開日期: | 2007 | 卷: | 91 | 期: | 9 | 來源出版物: | Applied Physics Letters | 摘要: | The authors report on the 394 nm UV light emission from low-temperature sputtered n-ZnOSi O2 thin films on top of the p-GaN heterostructure. They compare samples with and without a Si O2 current blocking layer. With a Si O2 layer, electroluminescence spectrum shows a sharp emission peak at 394 nm, which is attributed to the recombination of accumulated carriers between n-ZnOSi O2 and p-GaNSi O2 junctions. As for the sample without a Si O2 layer, a broadband ranging from 400 to 800 nm is observed, which is due to Mg+ deep-level transition in the GaN along with defects in the ZnO layers. © 2007 American Institute of Physics. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-34548426550&doi=10.1063%2f1.2777175&partnerID=40&md5=49be9c8846bddff4fdb0127f9b5ca73c | DOI: | 10.1063/1.2777175 | SDG/關鍵字: | Defects; Electroluminescence; Gallium nitride; Heterojunctions; Light emission; Low temperature effects; Semiconducting zinc compounds; Current blocking layers; Recombination; Thin films |
顯示於: | 電機工程學系 |
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