https://scholars.lib.ntu.edu.tw/handle/123456789/499677
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chen, C.P. | en_US |
dc.contributor.author | Ke, M.Y. | en_US |
dc.contributor.author | Liu, C.C. | en_US |
dc.contributor.author | Chang, Y.J. | en_US |
dc.contributor.author | Yang, F.H. | en_US |
dc.contributor.author | JIAN-JANG HUANG | en_US |
dc.creator | Chen, C.P.;Ke, M.Y.;Liu, C.C.;Chang, Y.J.;Yang, F.H.;Huang, J.J. | - |
dc.date.accessioned | 2020-06-11T06:32:27Z | - |
dc.date.available | 2020-06-11T06:32:27Z | - |
dc.date.issued | 2007 | - |
dc.identifier.uri | https://www.scopus.com/inward/record.uri?eid=2-s2.0-34548426550&doi=10.1063%2f1.2777175&partnerID=40&md5=49be9c8846bddff4fdb0127f9b5ca73c | - |
dc.description.abstract | The authors report on the 394 nm UV light emission from low-temperature sputtered n-ZnOSi O2 thin films on top of the p-GaN heterostructure. They compare samples with and without a Si O2 current blocking layer. With a Si O2 layer, electroluminescence spectrum shows a sharp emission peak at 394 nm, which is attributed to the recombination of accumulated carriers between n-ZnOSi O2 and p-GaNSi O2 junctions. As for the sample without a Si O2 layer, a broadband ranging from 400 to 800 nm is observed, which is due to Mg+ deep-level transition in the GaN along with defects in the ZnO layers. © 2007 American Institute of Physics. | - |
dc.relation.ispartof | Applied Physics Letters | - |
dc.subject.other | Defects; Electroluminescence; Gallium nitride; Heterojunctions; Light emission; Low temperature effects; Semiconducting zinc compounds; Current blocking layers; Recombination; Thin films | - |
dc.title | Observation of 394 nm electroluminescence from low-temperature sputtered n-ZnOSi O2 thin films on top of the p-GaN heterostructure | en_US |
dc.type | journal article | en |
dc.identifier.doi | 10.1063/1.2777175 | - |
dc.identifier.scopus | 2-s2.0-34548426550 | - |
dc.relation.journalvolume | 91 | - |
dc.relation.journalissue | 9 | - |
item.fulltext | no fulltext | - |
item.cerifentitytype | Publications | - |
item.openairetype | journal article | - |
item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
item.grantfulltext | none | - |
crisitem.author.dept | Photonics and Optoelectronics | - |
crisitem.author.dept | Electrical Engineering | - |
crisitem.author.orcid | 0000-0002-5761-2177 | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
顯示於: | 電機工程學系 |
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