https://scholars.lib.ntu.edu.tw/handle/123456789/499948
標題: | Photoluminescence of plasma enhanced chemical vapor deposition amorphous silicon oxide with silicon nanocrystals grown at different fluence ratios and substrate temperatures | 作者: | Lin, C.-J. Lin, C.-K. Chang, C.-W. Chueh, Y.-L. Kuo, H.-C. Diau, E.W.-G. Chou, L.-J. GONG-RU LIN |
關鍵字: | Lifetime; Photoluminescence; Plasma enhanced chemical vapor deposition; Si-rich silicon dioxide; Silicon nanocrystals | 公開日期: | 2006 | 卷: | 45 | 期: | 2 A | 起(迄)頁: | 1040-1043 | 來源出版物: | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 摘要: | Near-infrared photoluminescent dynamics of thermally annealed Si-rich SiOx films grown by plasma enhanced chemical vapor deposition at different substrate temperatures and N2O/SiH4 fluence ratios are studied. The size of nanocrystallite Si (nc-Si) critically depends on the density of oxygen atoms in a Si-rich layer when the N2O/SiH 4 ratio is smaller than 4; that is, it significantly increases at low N2O/SiH4 ratios. Deposition at a high N 2O/SiH4 ratio strongly reduces the density of nc-Si and degrades the luminescence at 700-800 nm since the density of oxygen atoms is sufficient in the reaction of nc-Si with silicon atoms and formation of a stoichiometric SiO2 matrix. Under a high RF power condition, the increasing substrate temperature usually inhibits the precipitation of nc-Si since high-temperature growth facilitates stochiometric SiO2 deposition. The disappearance of visible PL reveals the complete regrowth of a stoichiometric SiO2 matrix around a nanocrystallite Si cluster after annealing. The results of the transient luminescent analysis of Si-rich SiO x samples corroborate well with the observed values and reveal a lifetime of 43 μs under an optimized nc-Si precipitation condition of 1100°C annealing for 3 h. ©2006 The Japan Society of Applied Physics. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-32244447212&doi=10.1143%2fJJAP.45.1040&partnerID=40&md5=ee9420ab563acd045597714c8c98679f | DOI: | 10.1143/JJAP.45.1040 | SDG/關鍵字: | Nanostructured materials; Photoluminescence; Plasma enhanced chemical vapor deposition; Precipitation (chemical); Substrates; Thermal effects; Lifetime; Nanocrystallite Si cluster; Si-rich silicon dioxide; Silicon nanocrystals; Amorphous silicon |
顯示於: | 電機工程學系 |
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