https://scholars.lib.ntu.edu.tw/handle/123456789/500111
Title: | Semi-transparent silicon-rich silicon carbide photovoltaic solar cells | Authors: | Cheng, C.-H. Chang, J.-H. CHIH-I WU GONG-RU LIN |
Issue Date: | 2015 | Journal Volume: | 5 | Journal Issue: | 46 | Start page/Pages: | 36262-36269 | Source: | RSC Advances | Abstract: | All silicon-rich silicon carbide (Si-rich SixC1-x)-based single p-i-n junction photovoltaic solar cells (PVSCs) were fabricated by growing nonstoichiometric Si-rich SixC1-x films through medium-temperature hydrogen-free plasma enhanced chemical vapor deposition. The Si-rich SixC1-x-based thin-film p-i-n junction PVSCs exhibit improved power conversion efficiency when an intrinsic Si-rich SixC1-x absorbing layer with a low C/Si composition ratio is added; amorphous Si (a-Si) particles are embedded in this absorbing layer. Lowering the [CH4]/[CH4 + SiH4] fluence ratio from 0.5 to 0.3 reduces the C/Si composition ratio of Si-rich SixC1-x films from 0.74 to 0.665. The absorbance of these films in the visible light region (400-800 nm) is substantially enhanced to 3.8 × 105 cm-1 by reducing the [CH4]/[CH4 + SiH4] fluence ratio, which is up to one order of magnitude larger than that of crystalline Si. The open-circuit voltage and short-circuit current density of the indium tin oxide/p-SixC1-x/i-SixC1-x/nSixC1-x/Al PVSCs are enhanced to 0.51 V and to 19.7 mA cm-2, respectively, raising the conversion efficiency and filling factor to 2.24% and 0.264, respectively. Through hydrogen-free deposition of the Si-rich SixC1-x p-i-n cells on a-Si based p-i-n cells, Si-rich SixC1-x/a-Si hybrid tandem PVSCs exhibit enhanced conversion efficiency and an enhanced filling factor of 6.47% and 0.332, respectively. © The Royal Society of Chemistry 2015. |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/500111 | DOI: | 10.1039/c4ra16998k | SDG/Keyword: | Amorphous films; Amorphous silicon; Conversion efficiency; Deposition; Efficiency; Film growth; Hydrogen; Open circuit voltage; Plasma enhanced chemical vapor deposition; Silicon; Silicon carbide; Solar cells; Solar power generation; Tin oxides; Absorbing layers; Composition ratio; Indium tin oxide; Medium temperature; Non-stoichiometric Si; Photovoltaic solar cells; Power conversion efficiencies; Visible light region; Silicon solar cells |
Appears in Collections: | 電機工程學系 |
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