https://scholars.lib.ntu.edu.tw/handle/123456789/500111
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Cheng, C.-H. | en_US |
dc.contributor.author | Chang, J.-H. | en_US |
dc.contributor.author | CHIH-I WU | en_US |
dc.contributor.author | GONG-RU LIN | en_US |
dc.creator | Cheng, C.-H.;Chang, J.-H.;Wu, C.-I.;Lin, G.-R. | - |
dc.date.accessioned | 2020-06-11T06:38:14Z | - |
dc.date.available | 2020-06-11T06:38:14Z | - |
dc.date.issued | 2015 | - |
dc.identifier.uri | https://scholars.lib.ntu.edu.tw/handle/123456789/500111 | - |
dc.description.abstract | All silicon-rich silicon carbide (Si-rich SixC1-x)-based single p-i-n junction photovoltaic solar cells (PVSCs) were fabricated by growing nonstoichiometric Si-rich SixC1-x films through medium-temperature hydrogen-free plasma enhanced chemical vapor deposition. The Si-rich SixC1-x-based thin-film p-i-n junction PVSCs exhibit improved power conversion efficiency when an intrinsic Si-rich SixC1-x absorbing layer with a low C/Si composition ratio is added; amorphous Si (a-Si) particles are embedded in this absorbing layer. Lowering the [CH4]/[CH4 + SiH4] fluence ratio from 0.5 to 0.3 reduces the C/Si composition ratio of Si-rich SixC1-x films from 0.74 to 0.665. The absorbance of these films in the visible light region (400-800 nm) is substantially enhanced to 3.8 × 105 cm-1 by reducing the [CH4]/[CH4 + SiH4] fluence ratio, which is up to one order of magnitude larger than that of crystalline Si. The open-circuit voltage and short-circuit current density of the indium tin oxide/p-SixC1-x/i-SixC1-x/nSixC1-x/Al PVSCs are enhanced to 0.51 V and to 19.7 mA cm-2, respectively, raising the conversion efficiency and filling factor to 2.24% and 0.264, respectively. Through hydrogen-free deposition of the Si-rich SixC1-x p-i-n cells on a-Si based p-i-n cells, Si-rich SixC1-x/a-Si hybrid tandem PVSCs exhibit enhanced conversion efficiency and an enhanced filling factor of 6.47% and 0.332, respectively. © The Royal Society of Chemistry 2015. | - |
dc.relation.ispartof | RSC Advances | - |
dc.subject.classification | [SDGs]SDG7 | - |
dc.subject.other | Amorphous films; Amorphous silicon; Conversion efficiency; Deposition; Efficiency; Film growth; Hydrogen; Open circuit voltage; Plasma enhanced chemical vapor deposition; Silicon; Silicon carbide; Solar cells; Solar power generation; Tin oxides; Absorbing layers; Composition ratio; Indium tin oxide; Medium temperature; Non-stoichiometric Si; Photovoltaic solar cells; Power conversion efficiencies; Visible light region; Silicon solar cells | - |
dc.title | Semi-transparent silicon-rich silicon carbide photovoltaic solar cells | en_US |
dc.type | journal article | en |
dc.identifier.doi | 10.1039/c4ra16998k | - |
dc.identifier.scopus | 2-s2.0-84928522137 | - |
dc.identifier.url | https://www.scopus.com/inward/record.uri?eid=2-s2.0-84928522137&doi=10.1039%2fc4ra16998k&partnerID=40&md5=f056b4cce76ad52476ac1bfcfbb3a489 | - |
dc.relation.pages | 36262-36269 | - |
dc.relation.journalvolume | 5 | - |
dc.relation.journalissue | 46 | - |
item.fulltext | no fulltext | - |
item.cerifentitytype | Publications | - |
item.openairetype | journal article | - |
item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
item.grantfulltext | none | - |
crisitem.author.dept | Photonics and Optoelectronics | - |
crisitem.author.dept | Electrical Engineering | - |
crisitem.author.dept | Electrical Engineering | - |
crisitem.author.dept | Photonics and Optoelectronics | - |
crisitem.author.orcid | 0000-0003-3613-7511 | - |
crisitem.author.orcid | 0000-0003-2061-1282 | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
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