Blue and yellow electroluminescence of MOSLED made on Si-rich SiO x grown by PECVD with detuning buried Si nanoclusters size
Journal
2008 Conference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS
Date Issued
2008
Author(s)
Chang, C.-H.
Abstract
Blue and yellow electroluminescence of MOSLEDs made on Si-rich SiOx with buried Si nanocrystals of different sizes controlled with minimum hydrogen passivation are demonstrated by PECVD at different N2O/SiH4 ratio and total fluence.
Type
conference paper