Very thin layers of TIP grown on InP using gas source molecular beam epitaxy

Growth of TlP on InP substrates was attempted using gas source molecular beam epitaxy. When the growth temperature is lower than 420°C, Tl3P droplets were found on the InP surface. For higher growth temperatures, a thin accumulation Tl layer in the surface region of the sample was detected by secondary ion mass spectroscopy. By increasing the Tl flux to 8 ML/s at a growth temperature of 450°C, besides the enhancement on the surface density of the Tl layer, an additional peak in the double crystal X-ray rocking curve was found. The 8.5 K photoluminescence spectra are also presented. © 1998 Elsevier Science B.V. All rights reserved.