https://scholars.lib.ntu.edu.tw/handle/123456789/500395
標題: | Very thin layers of TIP grown on InP using gas source molecular beam epitaxy | 作者: | Liu, J.-S. Wang, J.-S. HAO-HSIUNG LIN |
關鍵字: | Gas source molecular beam epitaxy; Iii-v compound semiconductors | 公開日期: | 1998 | 卷: | 192 | 期: | 3-4 | 起(迄)頁: | 372-375 | 來源出版物: | Journal of Crystal Growth | 摘要: | Growth of TlP on InP substrates was attempted using gas source molecular beam epitaxy. When the growth temperature is lower than 420°C, Tl3P droplets were found on the InP surface. For higher growth temperatures, a thin accumulation Tl layer in the surface region of the sample was detected by secondary ion mass spectroscopy. By increasing the Tl flux to 8 ML/s at a growth temperature of 450°C, besides the enhancement on the surface density of the Tl layer, an additional peak in the double crystal X-ray rocking curve was found. The 8.5 K photoluminescence spectra are also presented. © 1998 Elsevier Science B.V. All rights reserved. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-0032162870&doi=10.1016%2fS0022-0248%2898%2900403-5&partnerID=40&md5=cb443bfba47d9fe344aecef72d72a28d | DOI: | 10.1016/S0022-0248(98)00403-5 | SDG/關鍵字: | Molecular beam epitaxy; Photoluminescence; Secondary ion mass spectrometry; Semiconductor growth; Substrates; Thallium compounds; Thermal effects; X ray crystallography; Gas source molecular beam epitaxy; Thallium phosphide; X ray rocking curve; Semiconducting indium phosphide |
顯示於: | 電機工程學系 |
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