https://scholars.lib.ntu.edu.tw/handle/123456789/500461
標題: | Room-Temperature Photoreflectance Characterization of InAlAs/InGaAs Heterojunction Bipolar Transistor Structure Including Two-Dimensional Electron Gas | 作者: | Chen, Y.-H. Hsu, K.-T. Chen, K.-L. Jan, G.-J. HAO-HSIUNG LIN |
公開日期: | 1994 | 卷: | 33 | 期: | 5R | 起(迄)頁: | 2448- | 來源出版物: | Japanese Journal of Applied Physics | 摘要: | Using contactless photoreflectance at 300 K we have characterized two InAlAs/InGaAs heterojunction bipolar transistor structures grown by molecular beam epitaxy. The spectra from the InAlAs and InGaAs interface can be accounted for on the basis of a triangular potential well which confined two-dimensional electron gas. A detailed lineshape fit makes it possible to evaluate the Fermi energy, and hence the two-dimensional electron gas concentration. Furthermore, other important parameters of the system, such as built-in electric fields and In composition, can be evaluated. © The Japan Society of Applied Physics. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-0028422613&doi=10.1143%2fJJAP.33.2448&partnerID=40&md5=c3525375d217c54971f5c3ab5849919c | DOI: | 10.1143/JJAP.33.2448 | SDG/關鍵字: | Composition effects; Electric field effects; Electron transitions; Excitons; Heterojunctions; Interfaces (materials); Molecular beam epitaxy; Semiconducting aluminum compounds; Semiconducting gallium arsenide; Semiconducting indium compounds; Semiconductor device structures; Semiconductor growth; Indium aluminum arsenide; Indium gallium arsenide; Photoreflectance; Two dimensional electron gas; Bipolar transistors |
顯示於: | 電機工程學系 |
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