https://scholars.lib.ntu.edu.tw/handle/123456789/500714
Title: | Two capacitance states memory characteristic in metal–oxide–semiconductor structure controlled by an outer MOS-gate ring | Authors: | Li, H.-J. Yang, C.-F. Hwu, J.-G. JENN-GWO HWU |
Issue Date: | 2019 | Journal Volume: | 66 | Journal Issue: | 3 | Start page/Pages: | 1249-1254 | Source: | IEEE Transactions on Electron Devices | URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/500714 | DOI: | 10.1109/TED.2018.2889521 |
Appears in Collections: | 電機工程學系 |
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